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Si4214DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0235 at V GS = 10 V
0.028 at V GS = 4.5 V
I D (A) a
8.5
7.8
Q g (Typ.)
6.7
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? PC System Power
? Low Current DC/DC
SO-8
D 1
D 2
S 1
G 1
1
2
8
7
D 1
D 1
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top V ie w
Orderin g Information: Si4214DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
8.5
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
T A = 70 °C
I D
6.8
6.8 b, c
5.4 b, c
Pulsed Drain Current
I DM
30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
2.8
1.8 b, c
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
10
5
mJ
T C = 25 °C
3.1
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.0
2.0 b, c
W
T A = 70 °C
1.25 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady-State
R thJA
R thJF
52
30
62.5
40
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 64726
S09-1223-Rev. B, 29-Jun-09
www.vishay.com
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